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Results 1 to 20 of 23 for query "V. Narayanamurti". (0.00 sec.)

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1.

Radiation induced zero-resistance states in GaAs/AlGaAs heterostructures: Voltage-current characteristics and intensity dependence at the resistance minima
R. G. Mani; V. Narayanamurti; K. von Klitzing; J. H. Smet; W. B. Johnson; V. Umansky;
14 Jun 2003 / Phys. Rev. B 70, 155310 (2004)

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2.

Phase study of oscillatory resistances in microwave-irradiated- and dark- GaAs/AlGaAs devices: Indications of a new class of integral quantum Hall effect
R. G. Mani; W. B. Johnson; V. Umansky; V. Narayanamurti; K. Ploog;
1 Jun 2009

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3.

Demonstration of a 1/4-cycle phase shift in the radiation-induced oscillatory magnetoresistance in GaAs/AlGaAs devices
R G Mani; J H Smet; K von Klitzing; V Narayanamurti; W B Johnson; V Umansky;
9 Apr 2004 / Phys Rev Lett, 92 (14), 146801

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4.

Phase study of oscillatory resistances in high mobility GaAs/AlGaAs devices: Indications of a new class of integral quantum Hall effect
R. G. Mani; W. B. Johnson; V. Umansky; V. Narayanamurti; K. Ploog; PostScript; PDF; Other formats;
20 Jun 2006

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5.

Radiation induced oscillatory Hall effect in high mobility GaAs/AlGaAs devices
R. G. Mani; V. Narayanamurti; K. von Klitzing; J. H. Smet; W. B. Johnson; V. Umansky;
20 Oct 2003 / Phys. Rev. B 69, 161306 (2004)

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6.

Magnetoresistive response of a high mobility 2DES under electromagnetic wave excitation
R G Mani; J H Smet; K von Klitzing; V Narayanamurti; W B Johnson; V Umansky;
21 May 2003 / Proc. of the 26th International Conference on the Physics of Semiconductors, Edinburgh, Scotland, 29 July - 2 August 2002, IOP Conference Series 171, eds. A. C. Long and J. H. Davies (IOP, Bristol, 2003) H112

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7.

Radiation-induced oscillatory magnetoresistance as a sensitive probe of the zero-field spin splitting in high mobility GaAs/AlGaAs devices
R. G. Mani; J. H. Smet; K. von Klitzing; V. Narayanamurti; W. B. Johnson; V. Umansky;
3 Mar 2003 / Phys. Rev. B 69, 193304 (2004)

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8.

Hall carrier density and magnetoresistance measurements in thin film vanadium dioxide across the metal-insulator transition
Dmitry Ruzmetov; Don Heiman; Bruce B. Claflin; Venkatesh Narayanamurti; Shriram Ramanathan;
22 Jun 2010

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9.

Alternative paradigm for physical computing
Ian Appelbaum; J D Joannopoulos; V Narayanamurti;
30 Nov 2002 / Phys Rev E, 66 (6 Pt 2), 066612

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10.

Density of states and de Haas-van Alphen effect in two-dimensional electron systems
J P Eisenstein; H L Stormer; V Narayanamurti; A Y Cho; A C Gossard; C W Tu;
19 Aug 1985 / Phys Rev Lett, 55 (8), 875-878

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11.

Observation of one-dimensional second sound in superfluid helium
J P Eisenstein; V Narayanamurti;
18 Aug 1986 / Phys Rev Lett, 57 (7), 839-842

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12.

Quantum oscillations in the thermal conductance of GaAs/AlGaAs heterostructures
J P Eisenstein; A C Gossard; V Narayanamurti;
21 Sep 1987 / Phys Rev Lett, 59 (12), 1341-1344

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13.

Direct Observation of Quasi-Bound States and Band-Structure Effects in a Double Barrier Resonant Tunneling Structure Using Ballistic Electron Emission Microscopy
T Sajoto; J J O'Shea; S Bhargava; D Leonard; M A Chin; V Narayanamurti;
24 Apr 1995 / Phys Rev Lett, 74 (17), 3427-3430

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14.

Imaging and Spectroscopy of Single InAs Self-Assembled Quantum Dots using Ballistic Electron Emission Microscopy
M E Rubin; G Medeiros-Ribeiro; J J O'Shea; M A Chin; E Y Lee; P M Petroff; V Narayanamurti;
23 Dec 1996 / Phys Rev Lett, 77 (26), 5268-5271

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15.

Confinement-enhanced electron transport across a metal-semiconductor interface
I B Altfeder; J A Golovchenko; V Narayanamurti;
30 Jul 2001 / Phys Rev Lett, 87 (5), 056801

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16.

Imaging subsurface reflection phase with quantized electrons
I B Altfeder; V Narayanamurti; D M Chen;
20 May 2002 / Phys Rev Lett, 88 (20), 206801

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17.

Anisotropic metal-insulator transition in epitaxial thin films
I B Altfeder; X Liang; T Yamada; D M Chen; V Narayanamurti;
4 Jun 2004 / Phys Rev Lett, 92 (22), 226404

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18.

Spin polarized tunneling at finite bias
S O Valenzuela; D J Monsma; C M Marcus; V Narayanamurti; M Tinkham;
20 May 2005 / Phys Rev Lett, 94 (19), 196601

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19.

Artificially Structured Thin-Film Materials and Interfaces
V Narayanamurti;
27 Feb 1987 / Science, 235 (4792), 1023-1028

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20.

Anisotropic Correlations in Epitaxial Iron Silicide: Contribution of Surface and Bulk States
I. B. Altfeder; W. Yi; D. Sander; D. M. Chen; V. Narayanamurti;
26 Dec 2005

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